Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

نویسندگان

چکیده

For future sub-5 nm technology nodes, the fabrication of semiconductor devices will likely involve use area-selective atomic layer deposition (ALD). While ALD processes have been reported for a variety materials, most approaches yield limited selectivity, example, due to growth initiation at defects or impurities on non-growth area. Recently, we demonstrated that Ru can be combined with selective etching achieve metal-on-metal high selectivity. Cycles consisting an O2 plasma and H2 gas dose were integrated in ALD-etch supercycle recipe remove unwanted nuclei SiO2 area, while obtaining Pt The current work discusses challenging compromise needs made between selectivity net deposition, considering material is also removed from After investigating 100 200 °C SiO2, Al2O3, Pt, terms substrate temperature 150 was selected since difference thickness SiO2/Al2O3 maximum this temperature, even though still some occurred Al2O3 areas. Different supercycles studied, using varying etch times frequencies. amount (undesired) deposited area quantified, demonstrating improved longer times. On basis results, simple mathematical description nucleation, growth, effects during discussed, which assist design processes. Overall, illustrates how tuned simultaneously obtain desired locations.

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ژورنال

عنوان ژورنال: Journal of vacuum science & technology

سال: 2021

ISSN: ['2327-9877', '0734-211X']

DOI: https://doi.org/10.1116/6.0000912